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Published in:
2021 | OriginalPaper | Chapter
Computing Transient Response of Drain Current for High Electron Mobility Transistor in Presence of Hot Electrons
Authors : Swarnav Mukhopadhyay, Anwita Nath, Purbasha Ray, Arpan Deyasi
Published in: Proceeding of Fifth International Conference on Microelectronics, Computing and Communication Systems
Publisher: Springer Singapore
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Abstract
Transient response effect on drain current in HEMT is numerically computed considering presence of hot electrons inside the channel. Hot electrons are released from trap state to form 2DEG, which also increases device temperature. Effect of gate width and gate-to-drain length are computed on drain current, and leakage current is also evaluated for different temperatures. High peaks in drain current characteristics are observed, which is increased with higher temperature, larger gate width and lower gate-to-drain width. at the same instant, leakage current is reduced which speaks for effectiveness of the design. Current peak also appears earlier with increasing hot electron concentration, and diminishes if concentration becomes moderate. Care is taken so that width of the heated region should be less than barrier layer thickness, otherwise changing piezo-polarization can permanently damage the device.