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Journal of Materials Science: Materials in Electronics

Erschienen in:

27.02.2021

Sol–gel prepared ZnO:Al thin films for heterojunction diodes

verfasst von: O. F. Goktas, N. E. Koksal, O. Kaplan, A. Yildiz

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2021

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Abstract

Sol–gel method as a simple and low-cost approach is used to fabricate the heterostructures. Herein, Al-doped ZnO (AZO) thin films on p-Si subtrates are deposited via sol-gel method. AFM and SEM results reveal that the films have appreciably smooth surfaces. XRD results demonstrate that the films have highly oriented crystal structure, and the doping process is successfully performed. The analysis of I–V measurement characteristics unveils a nonideal diode behavior of AZO/Si heterojunctions. Considering the electrical properties, the device with AZO layer of 80 nm demonstrates a good rectifying behavior with rectification ratio of 926 at ± 4 V. The fabricated devices can be thought as diode for real applications. This investigation offers a paradigm for fabricating diodes from traditional semiconductor films.

Vorheriger Artikel A novel poly (vinyl alcohol)-aided ZnO/Fe2O3 nanocomposite as an ascorbic acid sensor

Nächster Artikel Physical, optical, thermal, mechanical, and photon shielding properties of Rb2O-reinforced SiO2–Na2O–CaO–MgO–Al2O3 glass system

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Titel: Sol–gel prepared ZnO:Al thin films for heterojunction diodes
verfasst von: O. F. Goktas
N. E. Koksal
O. Kaplan
A. Yildiz
Publikationsdatum: 27.02.2021
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 6/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-021-05498-1

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