Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors

J. A. Sanjurjo; E. López-Cruz; P. Vogl; M. Cardona

doi:10.1103/PhysRevB.28.4579

Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors

J. A. Sanjurjo, E. López-Cruz, P. Vogl, and M. Cardona

Phys. Rev. B 28, 4579 – Published 15 October 1983

Abstract

The mode Grüneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of $e_{T}^{*}$ on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for $e_{T}^{*}$ are interpreted by means of pseudopotential calculations of $e_{T}^{*}$ versus lattice constant.

Received 23 June 1983

DOI:https://doi.org/10.1103/PhysRevB.28.4579

Authors & Affiliations

J. A. Sanjurjo^*, E. López-Cruz^†, P. Vogl^‡, and M. Cardona

Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany

^*Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13100 Campinas, São Paulo, Brazil.
^†Departamento de Física, Instituto de Ciencias, Universidad Autónoma de Puebla, Apartado J-48, CP-72570 Puebla, Pue, Mexico.
^‡Institut für Theoretische Physik der Universität Graz, Universitätsplatz 5, A-8010 Graz, Austria.

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Vol. 28, Iss. 8 — 15 October 1983

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