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Published in: Journal of Electronic Materials 8/2023

10-02-2023 | Topical Collection: 19th Conference on Defects (DRIP XIX)

Investigation of Comet-Shaped Defects in an EPI-InP Layer Grown on S-Doped and Fe-Doped InP Substrates

Authors: Lijie Liu, Youwen Zhao, Jingming Liu, Yingli Wang, Jun Wang, Xuechao Sha

Published in: Journal of Electronic Materials | Issue 8/2023

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Abstract

Nanoscale-depth comet defects have been reported. They are a type of dislocation-driven nanostructure found in a semi-insulating Fe-InP substrate. Nomarski optical microscopy with the function of universal-differential interference contrast reflection (U-DICR), scanning electron microscopy, and atomic force microscopy revealed the presence of comet defect morphology features that contain a head and a tail and was subtle in scanning electron microscopy. We further employed the photoelectric coupling technique to prepare lamellae using a focused ion beam in a scanning electron microscope and demonstrated the growth mechanism through transmission electron microscopy energy-dispersive x-ray spectroscopy. Finally, we proposed an inhibition method for comet defects using two scenarios: controlling the substrate surface chemistry ratio of indium and phosphorus and optimizing of process parameters, such as desorption, prior to epitaxial growth.

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Metadata
Title
Investigation of Comet-Shaped Defects in an EPI-InP Layer Grown on S-Doped and Fe-Doped InP Substrates
Authors
Lijie Liu
Youwen Zhao
Jingming Liu
Yingli Wang
Jun Wang
Xuechao Sha
Publication date
10-02-2023
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 8/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10259-3

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